Joachim N. Burghartz was born in Aachen in 1956. He studied electrical engineering at RWTH Aachen and graduated (Dipl.-Ing.) in 1982. In 1987 he received his Ph. D. (Dr.-Ing.) from Universität Stuttgart.
Between 1982 and 1987 he was a member of the research team on sensors with integrated signal conversion, particularly magnetic field sensors, at Universität Stuttgart.
From 1987 until 1998 he worked at the IBM Thomas J. Watson lab in Yorktown Heights, NY, on selective silicon epitaxial, Si and SiGe high-speed transistor designs and integration processing as well as in CMOS technology. Following this, he expanded his research into the development of passive components, especially integrated high-performance silicon coils.
From 1998 until 2005, he was Full Professor at TU Delft and headed the High-Frequency Technology and Components (HiTeC) research team. He concentrated his research on Silicon HF technology with a focus spanning from work on materials to design on circuit components.
In addition, from March 2001 until August 2005, he served as Scientific Director at TU Delft´s Institute of Microelectronics and Submicron Technology (DIMES) .
Since October 2005, Prof. Dr. Burghartz has been Director and Chairman of the Board at Instituts für Mikroelektronik Stuttgart (IMS) as well as being Full Professor at Universität Stuttgart.
He has also been heading the Institut für Nano- und Mikroelektronische Systeme (INES) at Universität Stuttgart since March 1st, 2006.
August 18th, 2013, marked his launch as Manager of the IMS Mikro-Nano Produkte GmbH.
In recognition of his academic achievements he has been awarded prizes, such as the IEEE Electron Devices Society´s J. J. Ebers Award 2014, the Landesforschungspreis Baden-Württemberg 2009 and the ISSCC Jack Raper Award 2008. He is an IEEE Fellow and was Vice President of the IEEE Electron Devices Society between 2009 and 2013 as well as having been Associate Editor of the IEEE Transactions on Electron Devices between 2001 and 2006. He was a Member of the Executive and Technical Committees at the BCTM (General Chairman 2000), IEDM, ESSDERC, ISICDG, VLSI-TSA, DCIS and SBMICRO symposia. His list of publications include 91 papers (peer review) in journals, 244 publications for symposia, 3 books, 4 book chapters and 16 patents (patent families). A particular highlight is the technical book he edited commemorating the 60/35th anniversary of the IEEE Electron Devices Society „Guide to State-of-the-Art Electron Devices“ (Wiley&Sons Publishers) which was awarded the 2013 PROSE Award as best technical book of the year in engineering & technology.Joachim N. Burghartz was born in Aachen, Germany, in 1956. He received the M.S. (Dipl. Ing.) degree from the RWTH Aachen, Germany, in 1982 and the Ph.D. (Dr.-Ing.) degree from the University of Stuttgart, Germany, in 1987, both in electrical engineering.
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