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Best Paper Award at Photomask Japan 2006

November 21, 2006

A new type of phase shifting masks (EAPSM) based on bi-layer material Ta/Sio2 has been developed and characterized in cooperation with Schott Lithotec, Germany, Zeiss SMS. Germany IMEC. Belgium and Institut für Mikroelektronik Stuttgart, Germany. Their paper “Comparative Study of Bi-Layer Attenuating Phase-Shift Mask for Hyper-NA Lithography“ received the Best Paper Award of the conference.