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International Workshop on Nitride Semiconductors 2018 (IWN)

November 11, 2018

The IMS will be giving a presentation at the IWN 2018 in Kanazawa, Japan.


Session ED13 - HEMTs
November 16, 2018, 9:30

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned Silicon substrate
Lars Heuken1, Muhammad Alshahed1, Alessandro Ottaviani1, Dr. Mohammed Alomari1, Prof. Dr. Michael Heuken2 and Prof. Dr. Joachim N. Burghartz1
1Institute for Microelectronics Stuttgart (IMS CHIPS), Germany,
2AIXTRON SE, Germany


Further information on "IWN 2018" can be found under: https://www.iwn2018.jp

Location: Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, & Motenashi-Dome, Kanazawa, Japan